The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Dec. 17, 2013
U.s. Army Research Laboratory, Adelphi, MD (US);
Alan S. Edelstein, Alexandria, VA (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
An array of memory cells, each cell comprising a first and second ferromagnetic layers that form either a spin valve or a magnetic tunnel junction; at least one conductor operatively connected to at least one of the first and second ferromagnetic layers; a third ferromagnetic layer magnetically coupled to the second magnetic layer having permittivity which changes from a first state to a second state of lower permittivity upon heating; the second ferromagnetic layer being influenced by the permittivity of the third ferromagnetic layer; and a heater element operatively associated with the third magnetic layer which selectively provides heat to the third magnetic layer to change its permittivity. An alternate embodiment comprises an array of cells, each cell comprising a ferromagnetic region having permittivity which changes from a first state to a second state upon heating and a heater operatively which selectively provides heat to the third magnetic layer.