The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2014

Filed:

Jun. 04, 2012
Applicants:

Tae-jin Park, Yongin-si, KR;

Ki-hoon DO, Seoul, KR;

Myung-jin Kang, Yongin-si, KR;

Inventors:

Tae-Jin Park, Yongin-si, KR;

Ki-Hoon Do, Seoul, KR;

Myung-Jin Kang, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/782 (2006.01); G11C 11/21 (2006.01); H01L 27/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

A phase change memory device includes a plurality of word lines, a plurality of lower electrodes, and a plurality of phase change material patterns. The plurality of word lines extend in a first direction and the plurality of word lines are arranged along a second direction perpendicular to the first direction. The lower electrodes are on the word lines and the lower electrodes are arranged in a direction diagonal to the first direction by a first angle. Each of the plurality of phase change material patterns are on a corresponding one of the plurality of lower electrodes.


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