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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8824177 B1

PDFFull Text
Date of Patent:
Sep. 02, 2014

Filed:

Jan. 28, 2011

Semiconductor device and snubber device having a sic-mosfet and a zener diode

Applicant:

Shinsuke Godo, Tokyo, JP;

Inventor:

Shinsuke Godo, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Adolf Berhane

Assistant Examiner:

Yemane Mehari

Int. Cl.
CPC ...
H02H 7/122 (2006.01); H03K 17/0814 (2006.01); H02M 1/34 (2007.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 29/866 (2006.01); H01L 49/02 (2006.01); H01L 27/06 (2006.01); H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H02M 1/34 (2013.01); H01L 24/48 (2013.01); H03K 17/08148 (2013.01); H01L 29/866 (2013.01); H01L 2224/48137 (2013.01); H01L 28/20 (2013.01); H01L 23/49575 (2013.01); Y02B 70/1483 (2013.01); H01L 27/0629 (2013.01); H01L 2224/48247 (2013.01); H01L 2924/13091 (2013.01); H01L 29/1608 (2013.01); H01L 29/0619 (2013.01); H01L 29/7802 (2013.01); H01L 2924/13055 (2013.01);
Abstract

A semiconductor device of the present invention includes a switching transistor, and a recovery diode and a snubber device which are mounted on a single conductive substrate (frame) on which the switching transistor is also mounted. The snubber device includes a SiC-MOSFET connected between an output terminal C and a reference terminal E of the switching transistor, a Zener diode formed between a gate terminal G and a drain terminal D of the SiC-MOSFET, and a resistor formed between the gate terminal G and a source terminal S of the SiC-MOSFET. The reference terminal E of the switching transistor, the source terminal S of the SiC-MOSFET, and an anode terminal of the recovery diode are commonly connected.

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