The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Oct. 01, 2010
Applicant:
Takashi Miyazawa, Suwa, JP;
Inventor:
Takashi Miyazawa, Suwa, JP;
Assignee:
Seiko Espon Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/038 (2013.01); G09G 3/32 (2006.01);
U.S. Cl.
CPC ...
G09G 3/3233 (2013.01); G09G 2300/0866 (2013.01); G09G 2310/0262 (2013.01); G09G 2310/0251 (2013.01); G09G 2300/0819 (2013.01); G09G 2320/043 (2013.01); G09G 3/3291 (2013.01); G09G 2300/0852 (2013.01); G09G 2310/0256 (2013.01); G09G 2310/0254 (2013.01);
Abstract
A gate of a driving transistor is set to a offset level corresponding to the threshold of the driving transistor by an initializing current flowing between a source and a drain of the driving transistor or a compensating transistor for the driving transistor. A conduction state of the driving transistor is set according to a gate voltage of the gate of the driving transistor that corresponds to a data signal and the threshold of the driving transistor. A current of which a level corresponds to the conduction state and of which the direction is opposite to the direction of the initializing current flows through driving transistor.