The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Aug. 21, 2012
Joos Dieter, Mechelen, BE;
Wim Philibert, Mortsel, BE;
Patrick Reynaert, Vertrijk, BE;
Dixian Zhao, Leuven, BE;
Joos Dieter, Mechelen, BE;
Wim Philibert, Mortsel, BE;
Patrick Reynaert, Vertrijk, BE;
Dixian Zhao, Leuven, BE;
ST-Ericsson SA, Plan-les-Ouates, CH;
Abstract
An Extremely High Frequency (EHF) dual-mode PA with a power combiner is designed using 40-nm bulk CMOS technology. One of the unit PAs can be switched off for the low power applications. In the design, circuit level optimization and trade-off are performed to ensure the good performance in both modes. The PA achieves a Pof 17.4 dBm with 29.3% PAE in high power mode and a Pof 12.6 dBm with 19.6% PAE in low power mode. The reliability measurements are also conducted and a lifetime of 80613 hours is estimated based on a commonly used empirical model. The excellent performance (e.g., highest reported PAE) achieved in this design further confirms the scaling of CMOS technology will continue to benefit the mm-wave transceiver design.