The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Jun. 01, 2011
Applicants:
Yoshihiro Yamaguchi, Tokyo, JP;
Yoshiko Obiraki, Tokyo, JP;
Inventors:
Yoshihiro Yamaguchi, Tokyo, JP;
Yoshiko Obiraki, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/50 (2006.01); H01L 23/34 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01); H01L 23/367 (2006.01);
U.S. Cl.
CPC ...
H01L 25/072 (2013.01); H01L 2924/00014 (2013.01); H01L 2224/48472 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/10254 (2013.01); H01L 2924/01082 (2013.01); H01L 2224/49175 (2013.01); H01L 2924/01005 (2013.01); H01L 2224/73221 (2013.01); H01L 2224/45124 (2013.01); H01L 24/49 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/014 (2013.01); H01L 2924/10272 (2013.01); H01L 23/367 (2013.01); H01L 2224/4813 (2013.01); H01L 24/73 (2013.01); H01L 24/29 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/01006 (2013.01); H01L 2224/29139 (2013.01); H01L 24/37 (2013.01); H01L 2224/37012 (2013.01); H01L 2224/40475 (2013.01); H01L 2924/01029 (2013.01); H01L 2224/48137 (2013.01); H01L 2924/01068 (2013.01); H01L 24/32 (2013.01); H01L 2224/40137 (2013.01); H01L 2224/73263 (2013.01); H01L 2224/32245 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/01033 (2013.01);
Abstract
An object is to provide a semiconductor device having a plate electrode adapted to a plurality of chips, capable of being produced at low cost, and having high heat cycle property. A semiconductor device according to the present invention includes a plurality of semiconductor chips formed on a substrate, and a plate electrode connecting electrodes of the plurality of semiconductor chips. The plate electrode has half-cut portions formed by half-pressing and the raised sides of the half-cut portions are bonded with the electrodes of the semiconductor chips.