The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2014

Filed:

Feb. 13, 2013
Applicant:

First Sensor Ag, Berlin, DE;

Inventor:

Michael Pierschel, Berlin, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 27/144 (2006.01); H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035272 (2013.01); H01L 27/1446 (2013.01); H01L 31/107 (2013.01);
Abstract

A semiconductor structure for a radiation detector, comprising a substrate composed of a semiconductor material of a first conductivity type, a semiconductor substrate, wherein the semiconductor substrate is provided with a semiconductor layer provided on the substrate and having a higher resistance in comparison to the substrate, of the first conductivity type, and electrically doped with a doping concentration, a plurality of doped regions, wherein the plurality of doped regions are provided in the semiconductor substrate and separated from each other, of a second conductivity type that is opposite from the first conductivity type, and electrically doped with a doping concentration that is higher than the doping concentration in the semiconductor substrate, at least one further doping region, and a cover layer is provided.


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