The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Sep. 14, 2007
Applicants:
Gregory Herman, Albany, OR (US);
Peter Mardllovich, Corvallis, OR (US);
Randy Hoffman, Corvallis, OR (US);
Inventors:
Gregory Herman, Albany, OR (US);
Peter Mardllovich, Corvallis, OR (US);
Randy Hoffman, Corvallis, OR (US);
Assignee:
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 29/66742 (2013.01); H01L 29/41733 (2013.01); H01L 29/7391 (2013.01);
Abstract
In one method of forming a semiconductor device, a first electrode is formed electrically coupled with a semiconductor material. After the first electrode is formed, an insulator is formed over the semiconductor material adjoining the first electrode and extending a selected distance from the first electrode. After the insulator is formed, a second electrode is formed electrically coupled with the semiconductor material adjoining the insulator.