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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8823097 B1

PDFFull Text
Expired
Date of Patent:
Sep. 02, 2014

Filed:

Nov. 18, 2009

Protection device with a thin-film resistance connected to plural drain regions

Applicants:

Tsutomu Imoto, Kanagawa, JP;

Toshio Kobayashi, Kanagawa, JP;

Inventors:

Tsutomu Imoto, Kanagawa, JP;

Toshio Kobayashi, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:

Sony Corporation

Primary Examiner:

Thomas L Dickey

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/8605 (2006.01); H01L 29/78 (2006.01); H01L 29/735 (2006.01); H01L 27/02 (2006.01); H01L 29/66 (2006.01); H01L 29/73 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8605 (2013.01); H01L 29/7835 (2013.01); H01L 29/735 (2013.01); H01L 27/0277 (2013.01); H01L 29/66659 (2013.01); H01L 29/7304 (2013.01); H01L 29/0847 (2013.01); H01L 29/0821 (2013.01);
Abstract

A transistor-type protection device includes: a semiconductor substrate; a well of a first-conductivity-type formed in the semiconductor substrate; a source region of a second-conductivity-type formed in the well; a gate electrode formed on the well via a gate insulating film at one side of the source region; plural drain regions of a second-conductivity-type formed apart from each other and respectively separated at a predetermined distance from a well part immediately below the gate electrode film; and a resistive connection part connecting between the plural drain regions with a predetermined electric resistance.

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Imoto, Tsutomu. (2014). Protection device with a thin-film resistance connected to plural drain regions (U.S. Patent No. 8823097). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8823097

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