The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Jun. 14, 2007
Ralf Lerner, Erfurt, DE;
Ralf Lerner, Erfurt, DE;
X-Fab Semiconductor Foundries AG, Erfurt, DE;
Abstract
It is the purpose of the invention to provide a MOS transistor () which guarantees a voltage as high as possible, has a required area as small as possible and which enables the integration into integrated smart power circuits. It results there from as an object of the invention to form the edge structure of the transistors such that it certainly fulfils the requirements on high breakthrough voltages, a good isolation to the surrounding region and requires a minimum of surface on the silicon disc anyway. This is achieved with an elongated MOS power transistor having drain () and source () for high rated voltages above 100V, wherein the transistor comprises an isolating trench () in the edge area for preventing an early electrical breakthrough below the rated voltage. The trench is lined with an isolating material (), wherein the isolating trench terminates the circuit component.