The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Jan. 31, 2011
Applicants:
Eun-hong Lee, Anyang-si, KR;
Seung-hun Hong, Seoul, KR;
Un-jeong Kim, Yongin-si, KR;
Hyung-woo Lee, Anyang-si, KR;
Sung Myung, Seoul, KR;
Inventors:
Eun-Hong Lee, Anyang-si, KR;
Seung-Hun Hong, Seoul, KR;
Un-jeong Kim, Yongin-si, KR;
Hyung-Woo Lee, Anyang-si, KR;
Sung Myung, Seoul, KR;
Assignees:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
SNU R&D Foundation, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 51/10 (2006.01); B82Y 10/00 (2011.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/102 (2013.01); H01L 51/105 (2013.01); B82Y 10/00 (2013.01); H01L 51/0048 (2013.01); H01L 51/0541 (2013.01);
Abstract
A semiconductor device according to example embodiments may include a channel including a nanowire and a charge storage layer including nanoparticles. A twin gate structure including a first gate and a second gate may be formed on the charge storage layer. The semiconductor device may be a memory device or a diode.