The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2014

Filed:

Sep. 22, 2011
Applicants:

Sun Kyung Kim, Yongin-si, KR;

Jin Wook Lee, Seoul, KR;

Hyun Kyong Cho, Gwacheon-si, KR;

Inventors:

Sun Kyung Kim, Yongin-si, KR;

Jin Wook Lee, Seoul, KR;

Hyun Kyong Cho, Gwacheon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/22 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); H01L 33/22 (2013.01); H01L 2933/0083 (2013.01);
Abstract

Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.


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