The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Aug. 31, 2012
Applicants:
Rei Yoneyama, Tokyo, JP;
Hiroyuki Okabe, Tokyo, JP;
Takahiro Inoue, Tokyo, JP;
Shinji Sakai, Tokyo, JP;
Inventors:
Rei Yoneyama, Tokyo, JP;
Hiroyuki Okabe, Tokyo, JP;
Takahiro Inoue, Tokyo, JP;
Shinji Sakai, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0312 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/1602 (2013.01); H01L 29/7802 (2013.01); H01L 29/6606 (2013.01);
Abstract
Provided is a semiconductor module having high inrush-current tolerance. A semiconductor module includes a switching element formed of a wide bandgap semiconductor, and a free wheel diode connected in antiparallel with the switching element, wherein the free wheel diode is made of silicon and has negative temperature characteristics.