The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Dec. 13, 2010
James Edgar, Manhattan, KS (US);
Michael Dudley, Miller Place, NY (US);
Martin Kuball, Bristol, GB;
Yi Zhang, Manhattan, KS (US);
Guan Wang, Worcester, MA (US);
Hui Chen, Stony Brook, NY (US);
Yu Zhang, Stony Brook, NY (US);
James Edgar, Manhattan, KS (US);
Michael Dudley, Miller Place, NY (US);
Martin Kuball, Bristol, GB;
Yi Zhang, Manhattan, KS (US);
Guan Wang, Worcester, MA (US);
Hui Chen, Stony Brook, NY (US);
Yu Zhang, Stony Brook, NY (US);
Kansas State University Research Foundation, Manhattan, KS (US);
State University of New York Stony Brook, Albany, NY (US);
The University of Bristol, Bristol, GB;
Abstract
A method of epitaxial growth of a material on a crystalline substrate includes selecting a substrate having a crystal plane that includes a plurality of terraces with step risers that join adjacent terraces. Each terrace of the plurality or terraces presents a lattice constant that substantially matches a lattice constant of the material, and each step riser presents a step height and offset that is consistent with portions of the material nucleating on adjacent terraces being in substantial crystalline match at the step riser. The method also includes preparing a substrate by exposing the crystal plane; and epitaxially growing the material on the substrate such that the portions of the material nucleating on adjacent terraces merge into a single crystal lattice without defects at the step risers.