The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Mar. 31, 2009
Applicants:
Vincent C. Korthuis, Corvallis, OR (US);
Randy Hoffman, Corvallis, OR (US);
Inventors:
Vincent C. Korthuis, Corvallis, OR (US);
Randy Hoffman, Corvallis, OR (US);
Assignee:
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
Abstract
In at least some embodiments, a thin-film transistor (TFT) includes a gate electrode and a gate dielectric covering the gate dielectric. The TFT also includes a source electrode and a drain electrode adjacent the gate dielectric. The TFT also includes a bi-layer channel between the source electrode and the drain electrode, the bi-layer channel having a zinc indium oxide (ZIO) layer positioned adjacent the gate dielectric and a zinc tin oxide (ZTO) layer that covers the ZIO layer.