The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Jun. 15, 2011
Katsushi Akita, Itami, JP;
Takashi Ishizuka, Itami, JP;
Kei Fujii, Itami, JP;
Hideaki Nakahata, Itami, JP;
Youichi Nagai, Osaka, JP;
Hiroshi Inada, Osaka, JP;
Yasuhiro Iguchi, Osaka, JP;
Katsushi Akita, Itami, JP;
Takashi Ishizuka, Itami, JP;
Kei Fujii, Itami, JP;
Hideaki Nakahata, Itami, JP;
Youichi Nagai, Osaka, JP;
Hiroshi Inada, Osaka, JP;
Yasuhiro Iguchi, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6.