The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Dec. 17, 2013
Kazuo Mukaibatake, Kyoto, JP;
Daisuke Okumura, Kyoto, JP;
Kazuo Mukaibatake, Kyoto, JP;
Daisuke Okumura, Kyoto, JP;
Shimadzu Corporation, Kyoto-Shi, JP;
Abstract
In a first-stage intermediate vacuum chamber, cluster ions causing a background noise are dominantly formed in area (A), while fragment ions are dominantly generated in area (B). Taking this fact into account, when no in-source CID analysis is performed, voltages applied to the first-stage plate electrode of an ion guide and the exit end of a desolvation tube are adjusted to create an accelerating electric field only in area (A) without creating such a field in area (B). Meanwhile, voltages applied to the electrodes of the ion guide are adjusted to create an electric field for separating ions according to their mobility and selecting a specific ion. Such an operation suppresses the cluster-ion formation, removes ions which originate from impurities and have mass-to-charge ratios close to or equal to those of the ions originating from a target substance, and suppresses the fragment-ion generation. As a result, the target ions are detected with high S/N.