The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Jul. 28, 2005
Kuo-ching Liu, Fremont, CA (US);
Pei Hsien Fang, Los Altos Hills, CA (US);
Daniel J. Dere, Palo Alto, CA (US);
Jenn Liu, Fremont, CA (US);
Jih-chuang Huang, Santa Clara, CA (US);
Antonio Lucero, Fresno, CA (US);
Scott Pinkham, Bozeman, MT (US);
Steven Oltrogge, Belgrade, MT (US);
Duane Middlebusher, San Jose, CA (US);
Kuo-Ching Liu, Fremont, CA (US);
Pei Hsien Fang, Los Altos Hills, CA (US);
Daniel J. Dere, Palo Alto, CA (US);
Jenn Liu, Fremont, CA (US);
Jih-Chuang Huang, Santa Clara, CA (US);
Antonio Lucero, Fresno, CA (US);
Scott Pinkham, Bozeman, MT (US);
Steven Oltrogge, Belgrade, MT (US);
Duane Middlebusher, San Jose, CA (US);
New Wave Research, Fremont, CA (US);
Abstract
A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage including a vacuum chuck; and directing UV pulses of laser energy directed at a surface of the sapphire substrate using a solid state laser and locating edges of the substrate. The cutting is stopped based on the edge location, to prevent impacting background elements. The pulses of laser energy have a wavelength below about 560 nanometers, and preferably between about 150 in 560 nanometers. In addition, energy density, spot size, and pulse duration are established at levels sufficient to induce ablation of sapphire.