The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Mar. 15, 2013
SK Hynix Inc., Gyeonggi-do, KR;
Nam-Yeal Lee, Gyeonggi-do, KR;
Seung-Jin Yeom, Gyeonggi-do, KR;
Sung-Won Lim, Gyeonggi-do, KR;
Seung-Hee Hong, Gyeonggi-do, KR;
Hyo-Seok Lee, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating a semiconductor device includes forming a semiconductor structure having an open portion over a substrate, forming a sacrificial spacer on sidewalls of the open portion, forming a recessed first plug in the open portion, forming an air gap by removing the sacrificial spacer, forming a capping layer to expose the top surface of the recessed first plug and to cap the air gap, forming a protective layer over the capping layer and the recessed first plug, forming an ohmic contact layer over the protective layer, and forming a second plug over the ohmic contact layer.