The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Sep. 15, 2012
Tsu-chiang Chen, Taipei, TW;
Yu-mei Liao, Kaohsiung, TW;
Cheng-kuen Chen, Taipei, TW;
Powerchip Technology Corporation, Hsinchu, TW;
Abstract
A method of fabricating a semiconductor component that including the following steps is provided. A plurality of stacked structures is formed on a substrate. A first dielectric layer is formed to cover the stacked structures, wherein the first dielectric layer has a plurality of overhangs, the overhangs wrap top portions of the stacked structures. A dry conformable etching process is performed to conformably remove the first dielectric layer until a portion of the first dielectric layer located outside of the overhangs is removed. A second dielectric layer is formed on the stacked structures, wherein the second dielectric layer connects the adjacent overhangs to form an air gap between the stacked structures.