The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2014

Filed:

Sep. 06, 2012
Applicants:

Sung Min Hwang, Gyeonggi-do, KR;

IL Seok Seo, Chungcheongbuk-do, KR;

Inventors:

Sung Min Hwang, Gyeonggi-do, KR;

Il Seok Seo, Chungcheongbuk-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/792 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11551 (2013.01);
Abstract

A nonvolatile memory device includes a substrate including a cell region, contact regions and dummy contact regions. The contact regions and the dummy contact regions alternately are disposed. A plurality of word lines stacked at the cell region of the substrate and contact groups stacked at the contact regions and the dummy contact regions of the substrate. The contact groups include a plurality of pad layers being coupled to the word lines, and each of the contact groups has stepped structure disposed at a corresponding contact region.


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Hwang, Sung. (2014). Nonvolatile memory device and method of manufacturing the same (U.S. Patent No. 8822285). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8822285

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