The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2014

Filed:

Apr. 15, 2011
Applicants:

Kaushal K. Singh, Santa Clara, CA (US);

Robert Visser, Menlo Park, CA (US);

Vijay Parihar, Fremont, CA (US);

Randhir P. S. Thakur, Fremont, CA (US);

Inventors:

Kaushal K. Singh, Santa Clara, CA (US);

Robert Visser, Menlo Park, CA (US);

Vijay Parihar, Fremont, CA (US);

Randhir P. S. Thakur, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/075 (2012.01); H01L 31/076 (2012.01); H01L 31/055 (2014.01); H01L 31/052 (2014.01); H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02366 (2013.01); Y02E 10/548 (2013.01); H01L 31/075 (2013.01); H01L 31/076 (2013.01); Y02E 10/52 (2013.01); H01L 31/055 (2013.01); H01L 31/0527 (2013.01);
Abstract

Embodiments of the invention generally relate to solar cell devices and methods for manufacturing such solar cell devices. In one embodiment, a method for forming a solar cell device includes depositing a conversion layer over a first surface of a substrate, depositing a first transparent conductive oxide layer over a second surface of the substrate that is opposite the first surface, depositing a first p-doped silicon layer over the first transparent conductive oxide layer, depositing a first intrinsic silicon layer over the first p-doped silicon layer, and depositing a first n-doped silicon layer over the first intrinsic silicon layer. The method further includes depositing a second transparent conductive oxide layer over the first n-doped silicon layer, and depositing an electrically conductive contact layer over the second transparent conductive oxide layer.


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