The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Jun. 18, 2013
Applicant:
Sunpower Corporation, San Jose, CA (US);
Inventors:
Seung Bum Rim, Palo Alto, CA (US);
Michael Morse, San Jose, CA (US);
Taeseok Kim, San Jose, CA (US);
Michael J. Cudzinovic, Sunnyvale, CA (US);
Assignee:
SunPower Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/18 (2006.01); H01L 21/02 (2006.01); H01L 31/068 (2012.01); H01L 31/0264 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0264 (2013.01); H01L 31/18 (2013.01); H01L 21/02381 (2013.01); H01L 31/0682 (2013.01); H01L 21/02532 (2013.01); H01L 21/0245 (2013.01); Y02E 10/547 (2013.01); H01L 21/02513 (2013.01); Y02E 10/546 (2013.01); H01L 21/02494 (2013.01); H01L 31/182 (2013.01);
Abstract
A method of fabricating a solar cell is disclosed. The method includes the steps of forming a sacrificial layer on a silicon substrate, forming a doped silicon layer atop the sacrificial substrate, forming a silicon film atop the doped silicon layer, forming a plurality of interdigitated contacts on the silicon film, contacting each of the plurality of interdigitated contacts with a metal contact, and removing the sacrificial layer.