The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2014

Filed:

Apr. 04, 2013
Applicant:

Bae Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);

Inventors:

Chi-Hua Yang, Manassas, VA (US);

David Sargent, Manassas, VA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C23C 4/12 (2006.01);
U.S. Cl.
CPC ...
C23C 4/127 (2013.01);
Abstract

A method for fabricating infrared sensors is disclosed. a chalcogenide layer is initially deposited on a substrate. A group of vias is then formed within the chalcogenide layer. After the vias have been converted to a group of studs, a vanadium oxide layer is deposited on the chalcogenide layer covering the studs. Next, the vanadium oxide layer is separated into multiple vanadium oxide membranes. After the chalcogenide layer has been removed, each of the vanadium oxide membranes is allowed to be freestanding while only supported by a corresponding one of the studs. The vanadium oxide membranes will be used as infrared sensors.


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