The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2014

Filed:

Jan. 16, 2008
Applicants:

Hironori Kumagai, Osaka, JP;

Yasuhiro Hashimoto, Nara, JP;

Shigeo Hayashi, Kyoto, JP;

Takuma Asari, Hyogo, JP;

Toshiya Yokogawa, Nara, JP;

Inventors:

Hironori Kumagai, Osaka, JP;

Yasuhiro Hashimoto, Nara, JP;

Shigeo Hayashi, Kyoto, JP;

Takuma Asari, Hyogo, JP;

Toshiya Yokogawa, Nara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/583 (2010.01); H01M 10/04 (2006.01); B05D 3/00 (2006.01); B01J 35/00 (2006.01); B01J 23/745 (2006.01); B01J 37/02 (2006.01); B82Y 30/00 (2011.01); C25D 11/02 (2006.01); C25D 11/04 (2006.01); B01J 23/89 (2006.01);
U.S. Cl.
CPC ...
C25D 11/02 (2013.01); C25D 11/04 (2013.01); B01J 35/006 (2013.01); B01J 23/745 (2013.01); B01J 37/0226 (2013.01); B82Y 30/00 (2013.01); B01J 37/0244 (2013.01); B01J 23/8906 (2013.01);
Abstract

The present invention provides a nanostructure on an upper surface of which a small-diameter carbon nanotube (CNT) is formed and which improves an adhesive strength between a substrate and the CNT while controlling an orientation of the CNT, and a method for manufacturing the nanostructure. The nanostructure includes a substrate, a porous layerformed on the substrateto have a fine pore, a fine pore diameter control layerformed on the porous layer, and a carbon nanotubeformed to extend from the fine pore defined by the fine pore diameter control layer, and one end of the carbon nanotube is fixed by the fine pore diameter control layer. It is preferable that the substrateand the fine pore diameter control layerbe electrically conductive. It is preferable that the porous layerbe an anode oxide film. It is preferable that a melting point of the fine pore diameter control layerbe 600° C. or higher.


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