The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2014

Filed:

Oct. 12, 2005
Applicants:

Céline Bondoux, Versailles, FR;

Philippe Prene, Artannes sur Indre, FR;

Philippe Belleville, Tours, FR;

Robert Jerisian, Tours, FR;

Inventors:

Céline Bondoux, Versailles, FR;

Philippe Prene, Artannes sur Indre, FR;

Philippe Belleville, Tours, FR;

Robert Jerisian, Tours, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 5/12 (2006.01); H01L 23/58 (2006.01); H01L 21/469 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02107 (2013.01); C23C 16/403 (2013.01); H01L 23/5329 (2013.01); H01L 21/02282 (2013.01); H01L 21/02172 (2013.01);
Abstract

The present invention relates to a magnesium oxide-based (MgO) inorganic coating intended to electrically insulate semiconductive substrates such as silicon carbide (SiC), and to a method for producing such an insulating coating. The method of the invention comprises the steps of preparing a treatment solution of at least one hydrolysable organomagnesium compound and/or of at least one hydrolysable magnesium salt, capable of forming a homogeneous polymer layer of magnesium oxyhydroxide by hydrolysis/condensation reaction with water; depositing the treatment solution of the hydrolysable organomagnesium compound or of the hydrolysable magnesium salt, onto a surface to form a magnesium oxide-based layer; and densifying the layer formed at a temperature of less than or equal to 1000° C.


Find Patent Forward Citations

Loading…