The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Jun. 28, 2012
Young Jae Lee, Seoul, KR;
Kyoung Jong Yoo, Seoul, KR;
Jun Lee, Seoul, KR;
Jin Su Kim, Seoul, KR;
Jae Wan Park, Seoul, KR;
Young Jae Lee, Seoul, KR;
Kyoung Jong Yoo, Seoul, KR;
Jun Lee, Seoul, KR;
Jin Su Kim, Seoul, KR;
Jae Wan Park, Seoul, KR;
LG Innotek Co., Ltd., Seoul, KR;
Abstract
Provided is a nanowire manufacturing method, comprising forming a plurality of grid patterns on a substrate, forming a nanowire on the grid patterns, and separating the grid pattern and the nanowire. According to the present invention, the width and height of the nanowire can be adjusted by controlling the wet-etching process time period, and the nanowire can be manufactured at a room temperature at low cost, the nanowire can be mass-manufactured and the nanowire with regularity can be manufactured even in case of mass production.