The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Feb. 14, 2013
SK Hynix Inc., Icheon-si, KR;
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Seok Hwan Choi, Icheon-si, KR;
Joong Seob Yang, Icheon-si, KR;
Seung Ho Chang, Icheon-si, KR;
Sang Sik Kim, Icheon-si, KR;
Sang Chul Lee, Icheon-si, KR;
Ho Yeon Lee, Icheon-si, KR;
Jaekyun Moon, Daejeon, KR;
Jaehyeong No, Daejeon, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Abstract
A method for estimating channel characteristics of a nonvolatile memory device including a plurality of memory cells includes the steps of: calculating first threshold voltage distributions of the memory cells programmed according to input data, based on the input data and a physical structure of the memory cells; calculating second threshold voltage distributions of the memory cells, based on output data and the physical structure of the memory cells; and analyzing the relation between the first and second threshold voltage distributions, using a mask.