Systems and methods of semiconductor memory devices including features of output buffer initialization circuit(s) and/or multiple power-up detection/handling

Abstract

Systems and methods are disclosed involving adaptive power up features for high-speed synchronous RAM. In one exemplary implementation, there is provided a semiconductor device including a memory cell, power circuitry, and an output buffer with level shifting circuitry. Moreover, the device may include power circuitry comprised of a first power up circuit and a second power up circuit and/or level shifting circuitry comprised of a pull up level shift circuit and a pull down level shift circuit. Other implementations and specific circuit configurations are also disclosed.