The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Jun. 08, 2011
Magnetic random access memory device and method for producing a magnetic random access memory device
Applicants:
Rolf Allenspach, Rueschlikon, CH;
Carl Zinoni, Horgen, CH;
Inventors:
Rolf Allenspach, Rueschlikon, CH;
Carl Zinoni, Horgen, CH;
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/15 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/15 (2013.01); G11C 11/16 (2013.01);
Abstract
A magnetic random access memory (MRAM) device has read word lines, write word lines, bit lines, and a plurality of memory bit cells interconnected via the read word lines, the write word lines and the bit lines. Each memory bit cell has a fixed ferromagnetic layer element and a free ferromagnetic layer element separated by a dielectric tunnel barrier element. Each write word line and a respective number of free ferromagnetic layer elements are formed as a single continuous ferromagnetic line.