The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Jan. 03, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Ji-Seok Hong, Yongin-si, KR;
Kwang-chul Choi, Suwon-si, KR;
Sangwon Kim, Seoul, KR;
Hyun-Jung Song, Hwaseong-si, KR;
Eun-Kyoung Choi, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/02 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 23/29 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/29 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/94 (2013.01); H01L 2224/73104 (2013.01); H01L 24/33 (2013.01); H01L 2224/81191 (2013.01); H01L 2225/06513 (2013.01); H01L 2224/81201 (2013.01); H01L 21/563 (2013.01); H01L 2225/06541 (2013.01); H01L 2224/29036 (2013.01); H01L 2224/33051 (2013.01); H01L 2224/83986 (2013.01); H01L 23/3114 (2013.01); H01L 2224/293 (2013.01); H01L 21/561 (2013.01); H01L 25/0657 (2013.01); H01L 2224/131 (2013.01); H01L 2224/97 (2013.01); H01L 2224/2929 (2013.01); H01L 2224/83104 (2013.01); H01L 2224/9211 (2013.01); H01L 2224/83191 (2013.01); H01L 24/29 (2013.01); H01L 2224/29099 (2013.01); H01L 24/32 (2013.01); H01L 24/94 (2013.01); H01L 24/16 (2013.01); H01L 2224/84201 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 25/50 (2013.01);
Abstract
A semiconductor package includes first and second semiconductor elements electrically interconnected by a connection structure. The first and second semiconductor elements are joined by a protection structure that includes an adhesive layer surrounded by a retention layer.