The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Mar. 09, 2012
Brian Bowers, Kaysville, UT (US);
Brian Bowers, Kaysville, UT (US);
Fairchild Semiconductor Corporation, San Jose, CA (US);
Abstract
A MOSFET device has a funnel-shaped trench etched in a semiconductor substrate. The funnel-shaped trench has flared rim extending from a wider cross section trench mouth at the surface of the semiconductor substrate to a narrower cross section trench body portion which terminates in an epilayer portion of the semiconductor substrate. A gate electrode is disposed in the trench on the flared rim. Source and gate regions of the device abut upper and lower portions of the flared rim, respectively. A drain region of the device, which abuts the narrower cross section trench body portion, is self-aligned with a lower edge of a gate electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile