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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8816366 B1

PDFFull Text
Date of Patent:
Aug. 26, 2014

Filed:

May. 11, 2011

Nitride semiconductor device

Applicants:

Toshiyuki Takizawa, Kyoto, JP;

Tetsuzo Ueda, Osaka, JP;

Inventors:

Toshiyuki Takizawa, Kyoto, JP;

Tetsuzo Ueda, Osaka, JP;

Assignee:

Panasonic Corporation, Osaka, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Chuong A Luu

Assistant Examiner:

Rodolfo Fortich

Int. Cl.
CPC ...
H01L 33/02 (2010.01); H01L 21/02 (2006.01); B82Y 20/00 (2011.01); H01L 33/32 (2010.01); H01S 5/32 (2006.01); H01S 5/223 (2006.01); H01L 33/24 (2010.01); H01L 33/16 (2010.01); H01S 5/20 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); H01L 21/02587 (2013.01); H01L 21/02381 (2013.01); H01S 5/3202 (2013.01); H01S 5/2237 (2013.01); H01L 21/02458 (2013.01); B82Y 20/00 (2013.01); H01L 21/0254 (2013.01); H01L 21/02636 (2013.01); H01S 5/3216 (2013.01); H01L 33/24 (2013.01); H01L 21/02609 (2013.01); H01L 21/0242 (2013.01); H01L 21/02433 (2013.01); H01L 21/02516 (2013.01); H01L 33/16 (2013.01); H01S 5/2009 (2013.01); H01S 5/34333 (2013.01); H01L 33/32 (2013.01); H01L 21/02494 (2013.01); H01S 2304/04 (2013.01);
Abstract

An object of the present invention is to provide a nitride semiconductor device which shifts a luminescence wavelength toward a longer wavelength side without decreasing luminescence efficiency, and the nitride semiconductor device according to an implementation of the present invention includes: a GaN layer having a (0001) plane and a plane other than the (0001) plane; and an InGaN layer which contacts the GaN layer and includes indium, and the InGaN layer has a higher indium composition ratio in a portion that contacts the plane other than the (0001) plane than in a portion that contacts the (0001) plane.

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