The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Nov. 02, 2009
Nikolaus Gmeinwieser, Obertraubling, DE;
Matthias Sabathil, Regensburg, DE;
Andreas Leber, Regensburg, DE;
Nikolaus Gmeinwieser, Obertraubling, DE;
Matthias Sabathil, Regensburg, DE;
Andreas Leber, Regensburg, DE;
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Abstract
In at least one embodiment of the optoelectronic semiconductor chip (), the latter comprises a semiconductor layer sequence () comprising at least one active layer () designed for generating an electromagnetic radiation. Furthermore, the optoelectronic semiconductor chip () has coupling-out structures (), which are fitted at least indirectly on a radiation passage area () of the semiconductor layer sequence (). In this case, a material of the coupling-out structures () is different than a material of the semiconductor layer sequence (). The refractive indices of the materials of the coupling-out structures () and of the semiconductor layer sequence () deviate from one another by at most 30%. Furthermore, facets () of the coupling-out structures () have a total area amounting to at least 30% of an area content of the radiation passage area ().