The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2014

Filed:

Oct. 31, 2012
Applicants:

Zhangtao Wang, Beijing, CN;

Haijun Qiu, Beijing, CN;

Tae Yup Min, Beijing, CN;

Seung Moo Rim, Beijing, CN;

Inventors:

Zhangtao Wang, Beijing, CN;

Haijun Qiu, Beijing, CN;

Tae Yup Min, Beijing, CN;

Seung Moo Rim, Beijing, CN;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66765 (2013.01); H01L 27/1214 (2013.01);
Abstract

A TFT array substrate and a manufacturing method thereof, where the TFT array substrate includes a substrate; a gate line and a gate electrode integrated therewith, which are covered by a gate insulating layer, a semiconductor layer, and a ohmic contact layer sequentially. An insulating layer is formed on the resulting substrate and on both sides of the gate line and the gate electrode, the gate insulating layer, the semiconductor layer, and the ohmic contact layer. A trench is then formed in the ohmic contact layer to divide the ohmic contact layer over the semiconductor layer. A data line and first and second source/drain electrodes are then formed on the insulating layer and the ohmic contact layer.


Find Patent Forward Citations

Loading…