The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2014

Filed:

Nov. 25, 2011
Applicants:

Huaxiang Yin, Beijing, CN;

Jun Luo, Beijing, CN;

Chao Zhao, Kessel-lo, BE;

Honggang Liu, Beijing, CN;

Dapeng Chen, Beijing, CN;

Inventors:

Huaxiang Yin, Beijing, CN;

Jun Luo, Beijing, CN;

Chao Zhao, Kessel-lo, BE;

Honggang Liu, Beijing, CN;

Dapeng Chen, Beijing, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 29/7785 (2013.01); H01L 29/0895 (2013.01); Y10S 977/938 (2013.01);
Abstract

A semiconductor device, which comprises: a semiconductor substrate; a channel region on the semiconductor substrate, said channel region including a quantum well structure; a source region and a drain region on the sides of the channel region; a gate structure on the channel region; wherein the materials for the channel region, the source region and the drain region have different energy bands, and a tunneling barrier structure exists between the source region and the channel region.


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