The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Aug. 13, 2012
Tadashi Takeoka, Osaka, JP;
Yoshihiko Tani, Osaka, JP;
Kazuya Araki, Osaka, JP;
Yoshihiro Ueta, Osaka, JP;
Tadashi Takeoka, Osaka, JP;
Yoshihiko Tani, Osaka, JP;
Kazuya Araki, Osaka, JP;
Yoshihiro Ueta, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Abstract
A nitride semiconductor light-emitting device includes an n-type nitride semiconductor layer, a V pit generation layer, an intermediate layer, a multiple quantum well light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The multiple quantum well light-emitting layer is a layer formed by alternately stacking a barrier layer and a well layer having a bandgap energy smaller than that of the barrier layer. A V pit is partly formed in the multiple quantum well light-emitting layer, and an average position of starting point of the V pit is located in the intermediate layer.