The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Dec. 17, 2010
Applicants:
Zachary Matthew Stum, Niskayuna, NY (US);
Stephen Daley Arthur, Glenville, NY (US);
Kevin Sean Matocha, Rexford, NY (US);
Peter Almern Losee, Clifton Park, NY (US);
Inventors:
Zachary Matthew Stum, Niskayuna, NY (US);
Stephen Daley Arthur, Glenville, NY (US);
Kevin Sean Matocha, Rexford, NY (US);
Peter Almern Losee, Clifton Park, NY (US);
Assignee:
General Electric Company, Niskayuna, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/046 (2013.01); H01L 29/66068 (2013.01); H01L 29/7827 (2013.01);
Abstract
A method comprising, introducing a dopant type into a semiconductor layer to define a well region of the semiconductor layer, the well region comprising a channel region, and introducing a dopant type into the well region to define a multiple implant region substantially coinciding with the well region but excluding the channel region.