The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Nov. 19, 2013
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventors:
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a semiconductor layer () containing GaN and an electrode. The electrode includes an electrode main body (), a connection-use electrode () containing Al and formed at a position farther from the semiconductor layer () than the electrode main body (), and a barrier layer () formed between the electrode main body () and the connection-use electrode (), the barrier layer () containing at least one selected from the group consisting of W, TiW, WN, TiN, Ta, and TaN. A surface roughness RMS of the barrier layer () is 3.0 nm or less.