The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Apr. 17, 2009
Applicants:
Masayuki Ishibashi, Tokyo, JP;
Shinji Nakahara, Tokyo, JP;
Tetsuro Iwashita, Tokyo, JP;
Inventors:
Assignee:
Sumco Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 21/20 (2006.01); H01L 21/306 (2006.01); C30B 25/20 (2006.01); C30B 29/06 (2006.01); H01L 21/02 (2006.01); C30B 33/00 (2006.01); C30B 25/18 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30625 (2013.01); C30B 25/20 (2013.01); C30B 29/06 (2013.01); H01L 21/02609 (2013.01); H01L 21/02381 (2013.01); H01L 21/02587 (2013.01); H01L 21/02532 (2013.01); C30B 33/00 (2013.01); C30B 25/186 (2013.01);
Abstract
Disclosed is a wafer having a good haze level in spite of the fact that the inclination angle of {110} plane in the wafer is small. Also disclosed is a method for producing a silicon epitaxial wafer, which comprises the steps of: growing an epitaxial layer on a silicon single crystal substrate having a main surface of {110} plane of which an off-angle is less than 1 degree; and polishing the surface of the epitaxial layer until the surface of the epitaxial layer has a haze level of 0.18 ppm or less (as measured by SP2 at a DWO mode).