The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Jul. 11, 2012
Masakiyo Sumitomo, Okazaki, JP;
Makoto Asai, Anjo, JP;
Nozomu Akagi, Nukata-gun, JP;
Yasuhiro Kitamura, Chiryu, JP;
Hiroki Nakamura, Handa, JP;
Tetsuo Fujii, Toyohashi, JP;
Masakiyo Sumitomo, Okazaki, JP;
Makoto Asai, Anjo, JP;
Nozomu Akagi, Nukata-gun, JP;
Yasuhiro Kitamura, Chiryu, JP;
Hiroki Nakamura, Handa, JP;
Tetsuo Fujii, Toyohashi, JP;
Denso Corporation, Kariya, JP;
Abstract
A semiconductor device includes: a SOI substrate including a support layer, a first insulation film and a SOI layer; a first circuit; a second circuit; and a trench separation element. The SOI substrate further includes a first region and a second region. The first region has the support layer, the first insulation film and the SOI layer, which are stacked in this order, and the second region has only the support layer. The trench separation element penetrates the support layer, the first insulation film and the SOI layer. The trench separation element separates the first region and the second region. The first circuit is disposed in the SOI layer of the first region. The second circuit is disposed in the support layer of the second region.