The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Dec. 17, 2012
Applicant:
Globalfoundries Inc., Grand Cayman, KY (US);
Inventors:
Min-hwa Chi, Malta, NY (US);
Nam Sung Kim, Watervliet, NY (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A method of forming a FinFET device involves performing an epitaxial growth process to form a layer of semiconducting material on a semiconducting substrate, wherein a first portion of the layer of semiconducting material will become a fin structure for the FinFET device and wherein a plurality of second portions of the layer of semiconducting material will become source/drain structures of the FinFET device, forming a gate insulation layer around at least a portion of the fin structure and forming a gate electrode above the gate insulation layer.