The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Aug. 31, 2009
Suguru Ozawa, Kyoto, JP;
Atsuo Isobe, Kanagawa, JP;
Takashi Hamada, Kanagawa, JP;
Junpei Momo, Kanagawa, JP;
Hiroaki Honda, Kanagawa, JP;
Takashi Shingu, Kanagawa, JP;
Tetsuya Kakehata, Kanagawa, JP;
Suguru Ozawa, Kyoto, JP;
Atsuo Isobe, Kanagawa, JP;
Takashi Hamada, Kanagawa, JP;
Junpei Momo, Kanagawa, JP;
Hiroaki Honda, Kanagawa, JP;
Takashi Shingu, Kanagawa, JP;
Tetsuya Kakehata, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
After a single crystal semiconductor layer provided over a base substrate by attaching is irradiated with a laser beam, characteristics thereof are improved by first heat treatment, and after adding an impurity element imparting conductivity to the single crystal semiconductor layer, second heat treatment is performed at lower temperature than that of the first heat treatment.