The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Oct. 31, 2011
Tetsuhiro Tanaka, Kanagawa, JP;
Fumito Isaka, Kanagawa, JP;
Tetsuhiro Tanaka, Kanagawa, JP;
Fumito Isaka, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A photoelectric conversion device has a structure that includes a first amorphous silicon layer and a second amorphous silicon layer that are in contact with a single crystalline silicon substrate, and a first microcrystalline silicon layer with one conductivity type and a second microcrystalline silicon layer with a conductivity type that is opposite the one conductivity type that are in contact with the first and second amorphous silicon layers, respectively. The first and second microcrystalline silicon layers are formed using a plasma CVD apparatus that is suitable for high pressure film formation conditions.