The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2014

Filed:

Aug. 10, 2012
Applicants:

Kavita Surana, Grenoble, FR;

Mathieu Baudrit, Chambery, FR;

Pierre Mur, Crolles, FR;

Philippe Thony, Entre Deux Guiers, FR;

Inventors:

Kavita Surana, Grenoble, FR;

Mathieu Baudrit, Chambery, FR;

Pierre Mur, Crolles, FR;

Philippe Thony, Entre Deux Guiers, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 33/46 (2010.01); H01L 33/10 (2010.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 33/10 (2013.01);
Abstract

A method of manufacturing an optical reflector including an alternating stack of at least one first layer of complex refraction index nand at least one second layer of complex refraction index n, in which the first layer includes semiconductor nanocrystals, including the following steps: calculation of the total number of layers of the stack, of the thicknesses of each of the layers and of the values of complex refraction indices nand non the basis of the characteristics of a desired spectral reflectivity window of the optical reflector, including the use of an optical transfer matrices calculation method; calculation of deposition and annealing parameters of the layers on the basis of the total number of layers and of the values of previously calculated complex refraction indices nand n; deposition and annealing of the layers in accordance with the previously calculated parameters.


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