Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer

Abstract

A method of forming a p-type gallium nitride based semiconductor without activation annealing is provided, and the method can provide a gallium nitride based semiconductor doped with a p-type dopant. A GaN semiconductor regioncontaining a p-type dopant is formed on a supporting basein a reactor. An organometallic source and ammonia are supplied to the reactorto grow the GaN semiconductor layeron a GaN semiconductor layer. The GaN semiconductor is doped with a p-type dopant. Examples of the p-type dopant include magnesium. After the GaN semiconductor regionsandare grown, an atmospherecontaining at least one of monomethylamine and monoethylamine is prepared in the reactor. After the atmosphereis prepared, a substrate temperature is decreased from the growth temperature of the GaN semiconductor region. When the substrate temperature is lowered to room temperature after this film formation, a p-type GaN semiconductorand an epitaxial wafer E has been fabricated.