The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2014

Filed:

Aug. 22, 2012
Applicant:

Chun-wei Wu, New Taipei, TW;

Inventor:

Chun-Wei Wu, New Taipei, TW;

Assignee:

Nanya Technology Corp., Kueishan, Tao-Yuan Hsien, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2022 (2013.01); G03F 7/70466 (2013.01);
Abstract

The present invention provides a method of forming tight-pitched patterns. First, a target pattern is provided, wherein the target pattern comprises a plurality of first stripe patterns, and each of the first stripe patterns has a first width and a first length. Then, a photomask comprising a plurality of second stripe patterns corresponding to the first stripe patterns is provided, and each of the second stripe patterns has a second width and a second length. Then, a first exposure process with the photomask is provided in an exposure system, wherein the first exposure process uses a first light source that can resolve the second width of each of the second stripe patterns. Lastly, a second exposure process with the photo-mask is provided in the exposure system, wherein the second exposure process uses a second light source that cannot resolve the second width of each of the second stripe patterns.


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