The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 19, 2014

Filed:

Jun. 21, 2012
Applicants:

Ji-sang Lee, Suwon-Si, KR;

Ki Hwan Choi, Seoul, KR;

Inventors:

Ji-Sang Lee, Suwon-Si, KR;

Ki Hwan Choi, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/16 (2006.01); G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G11C 16/16 (2013.01); G11C 16/10 (2013.01); G11C 16/3418 (2013.01); G11C 168/0483 (2013.01); G11C 16/14 (2013.01);
Abstract

A non-volatile memory device, a data read method thereof and a recording medium are provided. The method includes receiving a data read command for a first word line in a memory cell array, reading data from a second word line adjacent to the first word line, and reading data from the first word line using a different voltage according to a state of the data read from the second word line. The number of read voltages used to distinguish an erased state and a first programmed state is greater than the number of read voltages used to distinguish a second programmed state and a third programmed state.


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