The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Mar. 01, 2013
International Business Machines Corporation, Armonk, NY (US);
Renata A. Camillo-Castillo, Essex Junction, VT (US);
Peng Cheng, South Burlington, VT (US);
Peter B. Gray, Jericho, VT (US);
Vibhor Jain, Essex Junction, VT (US);
Vikas K. Kaushal, Essex Junction, VT (US);
Marwan H. Khater, Astoria, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A bipolar device with an entirely monocrystalline intrinsic base to extrinsic base link-up region. To form the device, a first extrinsic base layer, which is amorphous or polycrystalline, is deposited such that it contacts an edge portion of a monocrystalline section of an intrinsic base layer through an opening in a dielectric layer. A second extrinsic base layer is deposited on the first. An anneal is performed, either before or after deposition of the second extrinsic base layer, so that the extrinsic base layers are monocrystalline. An opening is formed through the extrinsic base layers to a dielectric landing pad aligned above a center portion of the monocrystalline section of the intrinsic base layer. The dielectric landing pad is removed and a semiconductor layer is grown epitaxially on exposed monocrystalline surfaces of the extrinsic and intrinsic base layers, thereby forming the entirely monocrystalline intrinsic base to extrinsic base link-up region.