The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Mar. 18, 2013
Applicant:
Yoshitaka Kamo, Tokyo, JP;
Inventor:
Yoshitaka Kamo, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 27/06 (2006.01); H01L 27/02 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 27/0605 (2013.01); H01L 27/0207 (2013.01); H01L 29/41758 (2013.01);
Abstract
A semiconductor device includes: a semiconductor substrate having a hexagonal crystalline structure with a c-axis and c-planes; and transistors on a c plane of the semiconductor substrate. Source electrodes of the transistors are connected to each other. Drain electrodes of the transistors are connected to each other. Gate electrodes of the transistors are connected to each other. The gate electrodes of the transistors extend along directions that form angles with each other that are 60 degrees or 120 degrees, in a plan view seen from a direction perpendicular to the c plane of the semiconductor substrate.